Infineon ISZ Type N-Channel Power Transistor, 109 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1
- RS Stock No.:
- 348-903
- Mfr. Part No.:
- ISZ033N03LF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.79 05
(exc. VAT)
Kr.98 81
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 5 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 7,905 | Kr. 79,05 |
| 100 - 240 | Kr. 7,505 | Kr. 75,05 |
| 250 - 490 | Kr. 6,956 | Kr. 69,56 |
| 500 - 990 | Kr. 6,395 | Kr. 63,95 |
| 1000 + | Kr. 6,166 | Kr. 61,66 |
*price indicative
- RS Stock No.:
- 348-903
- Mfr. Part No.:
- ISZ033N03LF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 109A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TSDSON-8 | |
| Series | ISZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 109A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TSDSON-8 | ||
Series ISZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, RoHS, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Infineon’s StrongIRFET 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency.
General purpose products
Excellent robustness
Superior price/performance ratio
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
Related links
- Infineon ISZ N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1
- Infineon ISZ N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1
- Infineon ISZ N-Channel MOSFET 200 V, 8-Pin PG-TDSON-8 ISZ520N20NM6ATMA1
- Infineon ISZ N-Channel MOSFET 100 V, 8-Pin PG-TDSON-8 ISZ113N10NM5LF2ATMA1
- Infineon ISZ N-Channel MOSFET 135 V, 8-Pin PG-TDSON-8 ISZ143N13NM6ATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 FL BSZ0902NSATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 FL ISZ019N03L5SATMA1
- Infineon N-Channel MOSFET 200 V, 8-Pin PG-TSDSON-8 BSZ12DN20NS3GATMA1