Infineon ISZ Type N-Channel Power Transistor, 128 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1
- RS Stock No.:
- 348-902
- Mfr. Part No.:
- ISZ028N03LF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.126 43
(exc. VAT)
Kr.158 04
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 950 unit(s) shipping from 29. desember 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 12,643 | Kr. 126,43 |
| 100 - 240 | Kr. 12,012 | Kr. 120,12 |
| 250 - 490 | Kr. 11,12 | Kr. 111,20 |
| 500 - 990 | Kr. 10,239 | Kr. 102,39 |
| 1000 + | Kr. 9,85 | Kr. 98,50 |
*price indicative
- RS Stock No.:
- 348-902
- Mfr. Part No.:
- ISZ028N03LF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 128A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 128A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series ISZ | ||
Package Type PG-TSDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Its features a best-in-class RDS(on) of 2.8 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency. Compared to the previous technology, its achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
General purpose products
Excellent robustness
Superior price/performance ratio
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
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