MPN

Infineon ISZ Type N-Channel MOSFET, 72 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1

RS Stock No.:: 348-900
Mfr. Part No.:: ISZ056N03LF2SATMA1
Brand:: Infineon

Infineon ISZ Type N-Channel MOSFET, 72 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1

Bulk discount available

Subtotal (1 pack of 20 units)*

Kr. 102,86

(exc. VAT)

Kr. 128,58

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Pack*
20 - 180	Kr. 5,143	Kr. 102,86
200 - 480	Kr. 4,885	Kr. 97,70
500 - 980	Kr. 4,525	Kr. 90,50
1000 - 1980	Kr. 4,164	Kr. 83,28
2000 +	Kr. 4,01	Kr. 80,20

*price indicative

RS Stock No.:: 348-900
Mfr. Part No.:: ISZ056N03LF2SATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	72A
	Maximum Drain Source Voltage Vds	30V
	Series	ISZ
	Package Type	PG-TSDSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	7.4nC
	Maximum Power Dissipation Pd	52W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249‑2‑21, JEDEC, RoHS

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 72A
	Maximum Drain Source Voltage Vds 30V
	Series ISZ
	Package Type PG-TSDSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 7.4nC
	Maximum Power Dissipation Pd 52W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS

Datasheet - ISZ056N03LF2SATMA1

COO (Country of Origin):: CN

The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Infineon’s StrongIRFET 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 5.6 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Superior price/performance ratio

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

Infineon ISZ Type N-Channel MOSFET, 72 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1

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