Infineon ISZ Type N-Channel MOSFET, 72 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1

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Subtotal (1 pack of 20 units)*

Kr.131 74 

(exc. VAT)

Kr.164 68 

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 180Kr. 6,587Kr. 131,74
200 - 480Kr. 6,258Kr. 125,16
500 - 980Kr. 5,80Kr. 116,00
1000 - 1980Kr. 5,337Kr. 106,74
2000 +Kr. 5,137Kr. 102,74

*price indicative

RS Stock No.:
348-900
Mfr. Part No.:
ISZ056N03LF2SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

72A

Maximum Drain Source Voltage Vds

30V

Series

ISZ

Package Type

PG-TSDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

52W

Typical Gate Charge Qg @ Vgs

7.4nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249‑2‑21, JEDEC, RoHS

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Infineon’s StrongIRFET 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 5.6 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Superior price/performance ratio

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

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