Infineon BSC12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin TDSON BSC12DN20NS3GATMA1

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Subtotal (1 pack of 10 units)*

Kr.129 03 

(exc. VAT)

Kr.161 29 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 12,903Kr. 129,03
50 - 90Kr. 12,264Kr. 122,64
100 - 240Kr. 11,028Kr. 110,28
250 - 490Kr. 9,918Kr. 99,18
500 +Kr. 9,449Kr. 94,49

*price indicative

Packaging Options:
RS Stock No.:
171-1952
Mfr. Part No.:
BSC12DN20NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Package Type

TDSON

Series

BSC12DN20NS3 G

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

50W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

6.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.35mm

Width

6.35 mm

Height

1.1mm

Automotive Standard

No

The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading Benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Highest efficiency

Highest power density

Lowest board space consumption

Minimal device paralleling required

System cost improvement

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