Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

Kr.13 938 00 

(exc. VAT)

Kr.17 424 00 

(inc. VAT)

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  • Plus 15 000 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
3000 - 3000Kr. 4,646Kr. 13 938,00
6000 +Kr. 4,414Kr. 13 242,00

*price indicative

RS Stock No.:
217-2616
Mfr. Part No.:
IRFR220NTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

43W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Width

2.39 mm

Height

10.41mm

Automotive Standard

No

The Infineon 200V Single N-Channel HEXFET Power MOSFET in a D-Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

Capable of being wave-soldered

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