Infineon HEXFET Type N-Channel MOSFET, 17 A, 200 V TO-252 IRFR15N20DTRPBF

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Subtotal (1 pack of 5 units)*

Kr.73 53 

(exc. VAT)

Kr.91 91 

(inc. VAT)

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  • 5 540 unit(s) ready to ship
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5 - 45Kr. 14,706Kr. 73,53
50 - 120Kr. 12,768Kr. 63,84
125 - 245Kr. 11,898Kr. 59,49
250 - 495Kr. 11,052Kr. 55,26
500 +Kr. 10,296Kr. 51,48

*price indicative

Packaging Options:
RS Stock No.:
258-3980
Mfr. Part No.:
IRFR15N20DTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

165mΩ

Maximum Power Dissipation Pd

140W

Typical Gate Charge Qg @ Vgs

27nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Increased ruggedness

Multi-vendor compatibility

Industry standard qualification level

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