Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V TO-252

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Subtotal (1 reel of 2000 units)*

Kr.7 436 00 

(exc. VAT)

Kr.9 296 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000Kr. 3,718Kr. 7 436,00
4000 - 4000Kr. 3,532Kr. 7 064,00
6000 +Kr. 3,309Kr. 6 618,00

*price indicative

RS Stock No.:
258-3981
Mfr. Part No.:
IRFR220NTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

600mΩ

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

43W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Increased ruggedness

Wide availability from distribution partners

Industry standard qualification level

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