Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V TO-252

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Subtotal (1 reel of 3000 units)*

Kr.22 101 00 

(exc. VAT)

Kr.27 627 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 7,367Kr. 22 101,00

*price indicative

RS Stock No.:
257-5546
Mfr. Part No.:
IRFR4615TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-252

Mount Type

PCB

Maximum Drain Source Resistance Rds

34mΩ

Maximum Power Dissipation Pd

144W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface mount package

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