Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin TO-263 IRFS4615TRLPBF

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Kr.57 86 

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Kr.72 325 

(inc. VAT)

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5 - 45Kr. 11,572Kr. 57,86
50 - 120Kr. 10,41Kr. 52,05
125 - 245Kr. 9,724Kr. 48,62
250 - 495Kr. 9,152Kr. 45,76
500 +Kr. 8,466Kr. 42,33

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Packaging Options:
RS Stock No.:
827-4114
Mfr. Part No.:
IRFS4615TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

42mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

144W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.67mm

Height

4.83mm

Standards/Approvals

No

Width

9.65 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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