Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin IPAK IRFU4615PBF

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Subtotal (1 pack of 5 units)*

Kr.132 21 

(exc. VAT)

Kr.165 26 

(inc. VAT)

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Per Pack*
5 - 45Kr. 26,442Kr. 132,21
50 - 120Kr. 23,292Kr. 116,46
125 - 245Kr. 21,69Kr. 108,45
250 - 495Kr. 20,134Kr. 100,67
500 +Kr. 14,552Kr. 72,76

*price indicative

Packaging Options:
RS Stock No.:
262-6781
Mfr. Part No.:
IRFU4615PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

150V

Package Type

IPAK

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

42mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

144W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET provides benefits such as improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.

Enhanced body diode dV/dt and dI/dt capability

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