Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-247

RS Stock No.:: 919-4902
Mfr. Part No.:: IRFP140NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-247

Bulk discount available

Subtotal (1 tube of 25 units)*

Kr.479 45

(exc. VAT)

Kr.599 30

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

750 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
25 - 25	Kr. 19,178	Kr. 479,45
50 - 100	Kr. 15,728	Kr. 393,20
125 - 225	Kr. 14,767	Kr. 369,18
250 - 600	Kr. 13,81	Kr. 345,25
625 +	Kr. 12,657	Kr. 316,43

*price indicative

RS Stock No.:: 919-4902
Mfr. Part No.:: IRFP140NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	52mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	94nC
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	140W
	Maximum Operating Temperature	175°C
	Length	15.9mm
	Width	5.3 mm
	Height	20.3mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 52mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 94nC
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 140W
	Maximum Operating Temperature 175°C
	Length 15.9mm
	Width 5.3 mm
	Height 20.3mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF

This MOSFET plays a crucial role in improving efficiency and performance across various electronic applications. It is designed to accommodate high currents and voltages, offering dependable power management solutions in automation systems, electronics, and mechanical industries. Its ability to function under extreme conditions ensures versatility in numerous applications.

Features & Benefits

• Maximum continuous drain current of 33A for enhanced load capabilities

• Drain-source voltage rating of up to 100V for effective performance

• Low maximum drain-source resistance of 52 mΩ for efficient operation

• Designed for power dissipation of 140W to manage thermal conditions

• Typical gate charge of 94 nC at 10V for rapid switching speeds

Applications

• Reliable use in switching power supplies

• Motor control for accurate operation

• High current in power conversion systems

• Integration into power amplifiers for improved signal amplification

What is the maximum voltage this component can handle?

It withstands a maximum drain-source voltage of 100V, suitable for high-voltage applications.

How does the gate charge affect the operation?

A typical gate charge of 94 nC at 10V facilitates faster switching, enhancing circuit efficiency.

What are the thermal characteristics of this component?

It operates effectively between -55°C and +175°C, ensuring reliability in different environments.

Can this component be used in automation projects?

Yes, its high continuous current capacity and voltage ratings are ideal for various automation applications.

How does the low RDS(on) enhance its performance?

The low maximum drain-source resistance helps to reduce conduction losses, leading to more energy-efficient operation.