Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-220 IRF540NPBF

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Kr.148 70 

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Kr.185 88 

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20 - 80Kr. 7,435Kr. 148,70
100 - 180Kr. 5,806Kr. 116,12
200 - 480Kr. 5,429Kr. 108,58
500 - 980Kr. 5,057Kr. 101,14
1000 +Kr. 4,691Kr. 93,82

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RS Stock No.:
914-8154
Mfr. Part No.:
IRF540NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

130W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

71nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

10.54mm

Height

8.77mm

Width

4.69 mm

Standards/Approvals

No

Automotive Standard

No

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540NPBF


This MOSFET is designed to provide efficient switching capabilities and power management in various electronic applications. The device operates with a maximum continuous drain current of 33A and a maximum drain-source voltage of 100V. Housed in a TO-220AB package, this component is well-suited for both industrial and commercial uses, ensuring longevity and reliability under a range of environmental conditions.

Features & Benefits


• Utilises advanced processing for low on-resistance

• Supports fast switching speeds for efficient operation

• Fully avalanche rated for enhanced reliability under harsh conditions

• Offers a wide gate threshold voltage range for flexibility

• Designed for through-hole mounting for easy installation

Applications


• Ideal for high current switching in power supplies

• Used in automation and control systems

• Suitable for motor control and driving circuits

• Effective in inverters and converters for renewable energy systems

What is the significance of the low RDS(on) in this device?


A low RDS(on) improves efficiency by reducing power loss during operation, enabling better thermal management and enhancing overall performance in high-current applications.

How does the enhancement mode functionality influence its use?


The enhancement mode allows for low current operation until a specific gate voltage is applied, making it reliable for switching applications where precise control is essential.

What is the importance of the TO-220AB package design?


The TO-220AB package ensures effective heat dissipation, supporting high power dissipation levels while maintaining ease of mounting in various circuit configurations.

How does this MOSFET perform in extreme temperatures?


Operating effectively between -55°C to +175°C, it is designed to maintain performance in demanding environments, ensuring reliability even under challenging conditions.

What type of switching applications is this suitable for?


It is well-suited for powering loads in applications requiring rapid switching, such as motor drive systems, power converters, and various electronic control circuits.

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