Infineon BSC Type N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON BSC120N12LSGATMA1

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Subtotal (1 pack of 2 units)*

Kr.38 26 

(exc. VAT)

Kr.47 82 

(inc. VAT)

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Packaging Options:
RS Stock No.:
258-0697
Mfr. Part No.:
BSC120N12LSGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

120V

Package Type

TDSON

Series

BSC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.2mΩ

Channel Mode

N

Maximum Power Dissipation Pd

114W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Forward Voltage Vf

0.87V

Maximum Operating Temperature

150°C

Width

6.35 mm

Standards/Approvals

IEC 61249-2-21, RoHS

Length

5.49mm

Height

1.1mm

Automotive Standard

No

The Infineon OptiMOS 3 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The devices low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.

Low gate charge

Lower output charge

Logic level compatibility

Higher power density designs

Higher switching frequency

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