Infineon Type N-Channel MOSFET, 1200 V N TO-247
- RS Stock No.:
- 258-3763
- Mfr. Part No.:
- IMZ120R060M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.3 023 01
(exc. VAT)
Kr.3 778 77
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 60 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 100,767 | Kr. 3 023,01 |
| 60 - 60 | Kr. 95,73 | Kr. 2 871,90 |
| 90 + | Kr. 91,699 | Kr. 2 750,97 |
*price indicative
- RS Stock No.:
- 258-3763
- Mfr. Part No.:
- IMZ120R060M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 5.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 5.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC 1200 V, 60 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Highest efficiency
Reduced cooling effort
Related links
- Infineon MOSFET, 1200 V PG-TO247-4 IMZ120R060M1HXKSA1
- Infineon IKY50N120CH3XKSA1 Single IGBT, 100 A 1200 V PG-TO247-4-2
- Infineon IKY75N120CH3XKSA1 Single IGBT, 150 A 1200 V PG-TO247-4-2
- Infineon AIM SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4 AIMZH120R160M1TXKSA1
- Infineon IKZ75N65ES5XKSA1 Single IGBT, 80 A 1.42 V PG-TO247-4
- Infineon AIM SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4 AIMZH120R080M1TXKSA1
- Infineon AIM SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4 AIMZH120R060M1TXKSA1
- Infineon IMZC120 SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R022M2HXKSA1