Infineon IPA Type N-Channel MOSFET, 66 A, 650 V N TO-220 IPAN60R125PFD7SXKSA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.58 80 

(exc. VAT)

Kr.73 50 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18Kr. 29,40Kr. 58,80
20 - 48Kr. 26,425Kr. 52,85
50 - 98Kr. 24,71Kr. 49,42
100 - 198Kr. 22,935Kr. 45,87
200 +Kr. 21,45Kr. 42,90

*price indicative

Packaging Options:
RS Stock No.:
258-3780
Mfr. Part No.:
IPAN60R125PFD7SXKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

IPA

Mount Type

Surface

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The MOSFET in a TO-220 FullPAK narrow-lead package features RDS(on) of 125mOhm leading to low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Wide range of RDS(on) values

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

Related links