Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263

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Subtotal (1 reel of 1000 units)*

Kr.22 294 00 

(exc. VAT)

Kr.27 868 00 

(inc. VAT)

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Per Reel*
1000 +Kr. 22,294Kr. 22 294,00

*price indicative

RS Stock No.:
258-3802
Mfr. Part No.:
IPB180N10S403ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

108nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow


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