Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

Kr.58 92 

(exc. VAT)

Kr.73 65 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 3 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9Kr. 58,92
10 - 24Kr. 55,94
25 - 49Kr. 53,65
50 - 99Kr. 51,37
100 +Kr. 47,82

*price indicative

Packaging Options:
RS Stock No.:
258-3803
Mfr. Part No.:
IPB180N10S403ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

108nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow


Related links