Infineon IPD Type P-Channel MOSFET, 70 A, 30 V N TO-252 IPD068P03L3GATMA1

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Subtotal (1 pack of 5 units)*

Kr.41 59 

(exc. VAT)

Kr.51 99 

(inc. VAT)

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Units
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Per Pack*
5 - 45Kr. 8,318Kr. 41,59
50 - 120Kr. 7,574Kr. 37,87
125 - 245Kr. 7,07Kr. 35,35
250 - 495Kr. 6,636Kr. 33,18
500 +Kr. 6,154Kr. 30,77

*price indicative

Packaging Options:
RS Stock No.:
258-3831
Mfr. Part No.:
IPD068P03L3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon P-channel enhancement mode field-effect transistor is highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated


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