Infineon IPD Type N-Channel MOSFET, 31 A, 650 V Enhancement TO-252 IPD60R280PFD7SAUMA1

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Subtotal (1 pack of 2 units)*

Kr.37 64 

(exc. VAT)

Kr.47 04 

(inc. VAT)

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2 - 18Kr. 18,82Kr. 37,64
20 - 48Kr. 16,76Kr. 33,52
50 - 98Kr. 15,56Kr. 31,12
100 - 198Kr. 14,47Kr. 28,94
200 +Kr. 9,38Kr. 18,76

*price indicative

Packaging Options:
RS Stock No.:
258-3854
Mfr. Part No.:
IPD60R280PFD7SAUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO 252 DPAK package features RDS(on) of 280mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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