Infineon IPP Type N-Channel MOSFET, 120 A, 80 V, 3-Pin TDSON

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Subtotal (1 tube of 50 units)*

Kr.898 60 

(exc. VAT)

Kr.1 123 25 

(inc. VAT)

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  • 300 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
50 - 50Kr. 17,972Kr. 898,60
100 - 200Kr. 16,535Kr. 826,75
250 +Kr. 15,636Kr. 781,80

*price indicative

RS Stock No.:
258-3890
Mfr. Part No.:
IPP034N08N5AKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Series

IPP

Package Type

TDSON

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.4mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

167W

Forward Voltage Vf

0.97V

Typical Gate Charge Qg @ Vgs

69nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS 5 80 V MOSFETs offer the industry's lowest RDS(on). Additionally, compared to the previous generation, OptiMOS 5 80 V has an RDS(on) reduction of up to 43%.

Ideal for high switching frequency

Output capacitance reduction of up to 44 %

Highest system efficiency

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

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