Infineon HEXFET N-Channel MOSFET, 17 A, 100 V TO-263
- RS Stock No.:
- 258-3991
- Mfr. Part No.:
- IRL530NSTRLPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (800 units, on reels of 800)*
Kr. 5 656,00
(exc. VAT)
Kr. 7 072,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 800 unit(s) shipping from 22 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | Kr. 7,07 | Kr. 5 656,00 |
| 1600 - 1600 | Kr. 6,716 | Kr. 5 372,80 |
| 2400 + | Kr. 6,433 | Kr. 5 146,40 |
*price indicative
- RS Stock No.:
- 258-3991
- Mfr. Part No.:
- IRL530NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Typical Gate Charge Qg @ Vgs | 22.7nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.8W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Typical Gate Charge Qg @ Vgs 22.7nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.8W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
Related links
- Infineon HEXFET N-Channel MOSFET 100 V TO-263 IRL530NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF530NSTRLPBF
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- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-251
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-251 IRLU3410PBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF530NPBF