Infineon BSC Type N-Channel MOSFET, 122 A, 30 V N, 8-Pin TO-220 BSC030N03LSGATMA1
- RS Stock No.:
- 258-7762
- Mfr. Part No.:
- BSC030N03LSGATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.28 14
(exc. VAT)
Kr.35 175
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 670 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 5,628 | Kr. 28,14 |
| 50 - 120 | Kr. 5,056 | Kr. 25,28 |
| 125 - 245 | Kr. 3,386 | Kr. 16,93 |
| 250 - 495 | Kr. 3,248 | Kr. 16,24 |
| 500 + | Kr. 3,158 | Kr. 15,79 |
*price indicative
- RS Stock No.:
- 258-7762
- Mfr. Part No.:
- BSC030N03LSGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 122A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | BSC | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.35mm | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Length | 6.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 122A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series BSC | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Height 5.35mm | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Length 6.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 3 power MOSFET has ultra low gate and output charge, together with lowest on state resistance in small footprint packages, make it the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications.
Ultra low gate and output charge
Lowest on state resistance in small footprint packages
Superior thermal resistance
Avalanche rated
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