Infineon MOSFET, 50 A, 2000 V AG-EASY3B DF419MR20W3M1HFB11BPSA1

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Subtotal (1 unit)*

Kr.3 517 40 

(exc. VAT)

Kr.4 396 75 

(inc. VAT)

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Units
Per unit
1 - 1Kr. 3 517,40
2 - 2Kr. 3 341,62
3 +Kr. 3 200,91

*price indicative

Packaging Options:
RS Stock No.:
260-1093
Mfr. Part No.:
DF419MR20W3M1HFB11BPSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

2000V

Package Type

AG-EASY3B

Mount Type

Surface

Maximum Drain Source Resistance Rds

26.5mΩ

Forward Voltage Vf

6.15V

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFET features a 4-leg boost configuration in one Easy 3B housing and comes with the latest CoolSiC M1H generation. The 2000 V SiC MOSFET shares the same performance and benefits as the 1200 V M1H series incl. 12% lower RDS(on) at 125° C, wider gate source voltage area for higher flexibility, a maximum junction temperature of 175° C and smaller chip sizes.

High current density

Low inductive design

Rugged mounting due to integrated mounting clamps

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