Infineon IPP Type N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220 IPP60R065S7XKSA1

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Subtotal (1 unit)*

Kr.57 97 

(exc. VAT)

Kr.72 46 

(inc. VAT)

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1 - 9Kr. 57,97
10 - 24Kr. 55,03
25 - 49Kr. 52,74
50 - 99Kr. 50,45
100 +Kr. 47,02

*price indicative

Packaging Options:
RS Stock No.:
260-1218
Mfr. Part No.:
IPP60R065S7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

600V

Series

IPP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

167W

Typical Gate Charge Qg @ Vgs

51nC

Forward Voltage Vf

0.82V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

10.36mm

Width

9.45 mm

Height

4.57mm

Automotive Standard

No

The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.

High pulse current capability

Increased system performance

More compact and easier design

Lower BOM or/and TCO over prolonged life time

Shock & vibration resistance

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