Infineon IPP Type N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 IPP60R160P7XKSA1
- RS Stock No.:
- 258-3895
- Mfr. Part No.:
- IPP60R160P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.63 16
(exc. VAT)
Kr.78 96
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 198 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 31,58 | Kr. 63,16 |
| 20 - 48 | Kr. 28,085 | Kr. 56,17 |
| 50 - 98 | Kr. 26,485 | Kr. 52,97 |
| 100 - 198 | Kr. 24,655 | Kr. 49,31 |
| 200 + | Kr. 22,765 | Kr. 45,53 |
*price indicative
- RS Stock No.:
- 258-3895
- Mfr. Part No.:
- IPP60R160P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS P7 super junction MOSFET is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge of the CoolMOS 7th generation platform ensure its high efficiency.
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Related links
- Infineon MOSFET 650 V PG-TO 220 IPP60R160P7XKSA1
- Infineon MOSFET 650 V PG-TO 220 IPAN60R125PFD7SXKSA1
- Infineon MOSFET 650 V PG-TO 220 IPAN60R360PFD7SXKSA1
- onsemi N-Channel MOSFET 650 V TO-247 NTHL045N065SC1
- Infineon MOSFET 800 V PG-TO 220 IPA80R650CEXKSA2
- Infineon MOSFET 700 V PG-TO 220 IPP65R190CFDXKSA2
- Infineon MOSFET 700 V PG-TO 220 IPP65R095C7XKSA1
- Infineon MOSFET 800 V PG-TO 220 FullPAK IPA80R1K0CEXKSA2
