Infineon HEXFET Type P-Channel MOSFET, -42 A, -55 V TO-263

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Subtotal (1 reel of 800 units)*

Kr.37 442 40 

(exc. VAT)

Kr.46 803 20 

(inc. VAT)

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Units
Per unit
Per Reel*
800 +Kr. 46,803Kr. 37 442,40

*price indicative

RS Stock No.:
260-5058
Mfr. Part No.:
AUIRF4905STRL
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-42A

Maximum Drain Source Voltage Vds

-55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

20mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

170W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.3V

Typical Gate Charge Qg @ Vgs

53nC

Maximum Operating Temperature

150°C

Height

15.88mm

Width

4.83 mm

Length

10.67mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P Channel HEXFET Power MOSFET is specifically design for automotive applications. This power MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced process technology

Ultra low on resistance

Fast switching

Repetitive avalanche allowed up to Tjmax

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