STMicroelectronics Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220 STP65N150M9

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Kr.43 93 

(exc. VAT)

Kr.54 91 

(inc. VAT)

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Packaging Options:
RS Stock No.:
261-4760
Mfr. Part No.:
STP65N150M9
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

10.4 mm

Standards/Approvals

No

Height

4.6mm

Length

28.9mm

Automotive Standard

No

COO (Country of Origin):
CN

N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package


This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

All features


  • Worldwide best FOM RDS(on)*Qg among silicon-based devices

  • Higher VDSS rating

  • Higher dv/dt capability

  • Excellent switching performance

  • Easy to drive

  • 100% avalanche tested

  • Zener-protected

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