Infineon iPB Type N-Channel MOSFET, 197 A, 40 V Enhancement, 3-Pin TO-263 IPB012N04NF2SATMA1
- RS Stock No.:
- 262-5845
- Mfr. Part No.:
- IPB012N04NF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.63 39
(exc. VAT)
Kr.79 238
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 800 unit(s) shipping from 26. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 31,695 | Kr. 63,39 |
| 20 - 48 | Kr. 26,31 | Kr. 52,62 |
| 50 - 98 | Kr. 24,77 | Kr. 49,54 |
| 100 - 198 | Kr. 22,825 | Kr. 45,65 |
| 200 + | Kr. 21,28 | Kr. 42,56 |
*price indicative
- RS Stock No.:
- 262-5845
- Mfr. Part No.:
- IPB012N04NF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 197A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 197A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
Related links
- Infineon Dual SiC N-Channel MOSFET 40 V, 3-Pin PG-TO263-3 IPB012N04NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 60 V, 3-Pin PG-TO263-3 IPB015N06NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 40 V, 3-Pin PG-TO263-3 IPB011N04NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 40 V, 3-Pin PG-TO263-3 IPB014N04NF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 60 V, 3-Pin PG-TO263-3 IPB013N06NF2SATMA1
