Infineon HEXFET Type P-Channel MOSFET, -3.6 A, -30 V Enhancement, 8-Pin SOIC IRF7606TRPBF

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Subtotal (1 pack of 25 units)*

Kr.121 25 

(exc. VAT)

Kr.151 50 

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100Kr. 4,85Kr. 121,25
125 - 225Kr. 4,608Kr. 115,20
250 - 600Kr. 4,416Kr. 110,40
625 - 1225Kr. 2,91Kr. 72,75
1250 +Kr. 2,178Kr. 54,45

*price indicative

Packaging Options:
RS Stock No.:
262-6742
Mfr. Part No.:
IRF7606TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-3.6A

Maximum Drain Source Voltage Vds

-30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.8W

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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