Renesas Electronics NP100P06PDG Type P-Channel MOSFET, 100 A, 60 V P, 4-Pin MP-25ZP (TO-263) NP100P06PDG-E1-AY

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Subtotal (1 pack of 2 units)*

Kr.113 47 

(exc. VAT)

Kr.141 838 

(inc. VAT)

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Units
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Per Pack*
2 - 8Kr. 56,735Kr. 113,47
10 - 48Kr. 51,195Kr. 102,39
50 - 98Kr. 50,105Kr. 100,21
100 - 248Kr. 41,87Kr. 83,74
250 +Kr. 41,01Kr. 82,02

*price indicative

Packaging Options:
RS Stock No.:
264-1239
Mfr. Part No.:
NP100P06PDG-E1-AY
Brand:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

60V

Package Type

MP-25ZP (TO-263)

Series

NP100P06PDG

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

P

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

200W

Typical Gate Charge Qg @ Vgs

300nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Renesas Electronics provides a low voltage power with P-channel type MOS Field Effect Transistor which is designed for high current switching applications. It consist of a 100 A maximum drain current.

Maximum drain source voltage is 60 V

Mounting type is surface mount

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