Renesas Electronics NP100P06PDG Type P-Channel MOSFET, 100 A, 60 V P, 4-Pin MP-25ZP (TO-263) NP100P06PDG-E1-AY

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Subtotal 10 units (supplied in a tube)*

Kr. 648,65

(exc. VAT)

Kr. 810,81

(inc. VAT)

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  • Shipping from 26 February 2027
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10 - 48Kr. 64,865-
50 - 98Kr. 63,49Kr. 68,75
100 - 248Kr. 53,14Kr. 1 172,50
250 +Kr. 52,11Kr. 3 188,75

*price indicative

Packaging Options:
RS Stock No.:
264-1239P
Mfr. Part No.:
NP100P06PDG-E1-AY
Brand:
Renesas Electronics
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Brand

Renesas Electronics

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

60V

Series

NP100P06PDG

Package Type

MP-25ZP (TO-263)

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

P

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

200W

Typical Gate Charge Qg @ Vgs

300nC

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Renesas Electronics provides a low voltage power with P-channel type MOS Field Effect Transistor which is designed for high current switching applications. It consist of a 100 A maximum drain current.

Maximum drain source voltage is 60 V

Mounting type is surface mount

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