Microchip TN2540 Type N-Channel MOSFET, 175 A, 400 V Enhancement, 3-Pin TO-92

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Subtotal (1 reel of 1000 units)*

Kr.11 792 00 

(exc. VAT)

Kr.14 740 00 

(inc. VAT)

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Per Reel*
1000 +Kr. 11,792Kr. 11 792,00

*price indicative

RS Stock No.:
264-8920
Mfr. Part No.:
TN2540N3-G
Brand:
Microchip
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Brand

Microchip

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

175A

Maximum Drain Source Voltage Vds

400V

Package Type

TO-92

Series

TN2540

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

1W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (2.0V max.)

High input impedance

Low input capacitance (125pF max.)

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

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