Microchip TN2540 Type N-Channel MOSFET, 260 mA, 400 V Enhancement, 3-Pin TO-243 TN2540N8-G
- RS Stock No.:
- 177-9854
- Mfr. Part No.:
- TN2540N8-G
- Brand:
- Microchip
Subtotal (1 pack of 10 units)*
Kr.144 97
(exc. VAT)
Kr.181 21
(inc. VAT)
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In Stock
- Plus 1 940 unit(s) shipping from 29. desember 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | Kr. 14,497 | Kr. 144,97 |
*price indicative
- RS Stock No.:
- 177-9854
- Mfr. Part No.:
- TN2540N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 260mA | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-243 | |
| Series | TN2540 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Length | 4.6mm | |
| Width | 2.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 260mA | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-243 | ||
Series TN2540 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Length 4.6mm | ||
Width 2.6 mm | ||
Automotive Standard No | ||
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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