Microchip Type P-Channel MOSFET, -200 mA, 350 V MOSFET, 3-Pin SOT-23 TP5335K1-G

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Subtotal (1 pack of 10 units)*

Kr.64 98 

(exc. VAT)

Kr.81 22 

(inc. VAT)

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Per unit
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10 - 40Kr. 6,498Kr. 64,98
50 - 90Kr. 6,372Kr. 63,72
100 - 240Kr. 4,931Kr. 49,31
250 - 990Kr. 4,851Kr. 48,51
1000 +Kr. 4,748Kr. 47,48

*price indicative

Packaging Options:
RS Stock No.:
264-8932
Mfr. Part No.:
TP5335K1-G
Brand:
Microchip
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Brand

Microchip

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-200mA

Maximum Drain Source Voltage Vds

350V

Package Type

SOT-23

Mount Type

Through Hole

Pin Count

3

Channel Mode

MOSFET

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

0.36W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance and high gain

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

Free from secondary breakdown

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