Microchip VN0106 Type N-Channel MOSFET, 350 A, 60 V Enhancement, 3-Pin TO-92

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Subtotal (1 bag of 1000 units)*

Kr.6 123 00 

(exc. VAT)

Kr.7 654 00 

(inc. VAT)

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1000 +Kr. 6,123Kr. 6 123,00

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RS Stock No.:
264-8940
Mfr. Part No.:
VN0106N3-G
Brand:
Microchip
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Brand

Microchip

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

350A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-92

Series

VN0106

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

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