Microchip VP0104 Type P-Channel MOSFET, -500 mA, 40 V MOSFET, 3-Pin TO-92
- RS Stock No.:
- 264-8949P
- Mfr. Part No.:
- VP0104N3-G
- Brand:
- Microchip
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Kr. 515,35
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Kr. 644,20
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- Plus 100 unit(s) shipping from 09 November 2026
- Plus 1 000 unit(s) shipping from 24 November 2026
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Units | Per unit | Saving |
|---|---|---|
| 50 - 90 | Kr. 10,307 | - |
| 100 - 240 | Kr. 8,191 | 20% |
| 250 - 490 | Kr. 8,019 | 22% |
| 500 + | Kr. 7,871 | 23% |
*price indicative
- RS Stock No.:
- 264-8949P
- Mfr. Part No.:
- VP0104N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -500mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92 | |
| Series | VP0104 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | MOSFET | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -500mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92 | ||
Series VP0104 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode MOSFET | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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