ROHM R6013VND3 NaN N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 R6013VND3TL1
- RS Stock No.:
- 265-5415
- Mfr. Part No.:
- R6013VND3TL1
- Brand:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 111,88
(exc. VAT)
Kr. 139,85
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 2 445 unit(s) shipping from 21 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 22,376 | Kr. 111,88 |
| 50 - 95 | Kr. 20,088 | Kr. 100,44 |
| 100 - 245 | Kr. 16,154 | Kr. 80,77 |
| 250 - 995 | Kr. 15,832 | Kr. 79,16 |
| 1000 + | Kr. 13,178 | Kr. 65,89 |
*price indicative
- RS Stock No.:
- 265-5415
- Mfr. Part No.:
- R6013VND3TL1
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | R6013VND3 NaN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 131W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS NaN | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series R6013VND3 NaN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 131W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS NaN | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple
Related links
- ROHM R6013VND3 NaN N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD50R N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD50R N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1
- Infineon IPD50R N-Channel MOSFET 600 V Enhancement, 10-Pin TO-252
- Infineon IPD50R N-Channel MOSFET 600 V Enhancement, 10-Pin TO-252 IPDD60R190G7XTMA1
- STMicroelectronics STB N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh 13 A 3-Pin TO-220 STP13NK60ZFP
- Infineon CoolMOS C7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R180C7XKSA1