ROHM R6013VND3 NaN Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 R6013VND3TL1

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Subtotal (1 pack of 5 units)*

Kr.112 34 

(exc. VAT)

Kr.140 425 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 22,468Kr. 112,34
50 - 95Kr. 20,18Kr. 100,90
100 - 245Kr. 16,20Kr. 81,00
250 - 995Kr. 15,902Kr. 79,51
1000 +Kr. 13,202Kr. 66,01

*price indicative

Packaging Options:
RS Stock No.:
265-5415
Mfr. Part No.:
R6013VND3TL1
Brand:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Series

R6013VND3 NaN

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.3Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

131W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS NaN

Automotive Standard

No

The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.

Fast reverse recovery time (trr)

Low on resistance

Fast switching speed

Drive circuits can be simple

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