Vishay SIHK N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3

RS Stock No.:: 268-8316
Mfr. Part No.:: SIHK185N60EF-T1GE3
Brand:: Vishay

Vishay SIHK N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3

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Subtotal (1 pack of 2 units)*

Kr. 112,57

(exc. VAT)

Kr. 140,71

(inc. VAT)

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Units	Per unit	Per Pack*
2 - 48	Kr. 56,285	Kr. 112,57
50 - 98	Kr. 50,565	Kr. 101,13
100 - 248	Kr. 41,47	Kr. 82,94
250 - 998	Kr. 40,61	Kr. 81,22
1000 +	Kr. 31,805	Kr. 63,61

*price indicative

RS Stock No.:: 268-8316
Mfr. Part No.:: SIHK185N60EF-T1GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.193Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	32nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	114W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 650V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.193Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 32nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 114W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK185N60EF-T1GE3

COO (Country of Origin):: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHK185N60EF-T1GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching in PCB-mounted assemblies. It operates across a wide temperature span and complies with RoHS standards, making it suitable for industrial electronic systems requiring elevated voltage handling and thermal resilience.

Features and Benefits:

• 650V drain rating enabling high-voltage switching capability
• 16A continuous drain current supporting substantial load currents
• 114W power dissipation permitting sustained power handling
• 0.193Ω Rds(on) reducing conduction losses under load
• 32nC typical gate charge allowing predictable switching performance
• 30V maximum gate-source voltage providing robust gate tolerance

Applications

• Suitable for switching power supplies in high-voltage designs
• Ideal for industrial motor drives and inverter stages
• Used with renewable energy converters handling elevated voltages
• Can be used for power factor correction circuits on PCBs
• Suitable for general high-power transistor replacement in assemblies

What thermal range can it tolerate in demanding environments?

It is specified to operate from -55°C up to 150°C, accommodating both low-temperature storage and high-temperature operating conditions.

What mounting style does it require for PCB integration?

The device is supplied in a PowerPAK 10x12 package intended for PCB mounting to facilitate low-inductance connections and compact layouts.

How many pins are available for connection and grounding schemes?

It uses an 8-pin configuration which allows separation of gate, drain and source connections for flexible board routing.

Is it suitable for automotive-specific standards?

It is not classified to automotive standards and should be evaluated against vehicle-specific requirements before use.