Vishay SiJA Type N-Channel MOSFET, 126 A, 40 V Enhancement, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- RS Stock No.:
- 268-8323
- Mfr. Part No.:
- SiJA54ADP-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.123 78
(exc. VAT)
Kr.154 725
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 050 unit(s) shipping from 20. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 24,756 | Kr. 123,78 |
| 50 - 95 | Kr. 22,286 | Kr. 111,43 |
| 100 - 245 | Kr. 17,938 | Kr. 89,69 |
| 250 - 995 | Kr. 17,594 | Kr. 87,97 |
| 1000 + | Kr. 12,172 | Kr. 60,86 |
*price indicative
- RS Stock No.:
- 268-8323
- Mfr. Part No.:
- SiJA54ADP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8L | |
| Series | SiJA | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0023Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8L | ||
Series SiJA | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0023Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.13mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It has flexible leads which provide resilience to mechanical stress. It is used an application as synchronous rectification, dc or ac inverters.
Optimizes switching characteristics
ROHS compliant
UIS tested 100 percent
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