Infineon OptiMOS Type N-Channel MOSFET, 21 A, 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R115CFD7AATMA1

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Subtotal (1 reel of 1000 units)*

Kr.27 884 00 

(exc. VAT)

Kr.34 855 00 

(inc. VAT)

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1000 +Kr. 27,884Kr. 27 884,00

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RS Stock No.:
273-2779
Mfr. Part No.:
IPB65R115CFD7AATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO263-3

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.115Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

41nC

Maximum Power Dissipation Pd

114W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET is a 650V CoolMOS CFD7A power device, It is a Infineon latest generation of market leading automotive qualified high voltage CoolMOS MOSFETs. In addition to the well known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase shift full bridge and LLC.

Lower switching losses

High quality and reliability

100 percent avalanche tested

Optimized for higher battery voltages

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