Infineon StrongIRFET N-Channel Power MOSFET, 125 A, 30 V Enhancement, 3-Pin PG-TO263-3 IPB018N03LF2SATMA1

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Subtotal (1 unit)*

Kr. 31,80

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Kr. 39,75

(inc. VAT)

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1 - 9Kr. 31,80
10 - 99Kr. 20,71
100 - 499Kr. 14,30
500 - 799Kr. 12,47
800 +Kr. 10,75

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RS Stock No.:
762-987
Mfr. Part No.:
IPB018N03LF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

125A

Maximum Drain Source Voltage Vds

30V

Package Type

PG-TO263-3

Series

StrongIRFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

46nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

167W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

10.67mm

Standards/Approvals

RoHS

Height

4.83mm

Length

15.88mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 Power Transistor is a 30V N-channel MOSFET suitable for various applications. It operates in extreme conditions, with a maximum temperature rating of 175°C and conforms to environmental regulations.

100% avalanche tested

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

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