Infineon StrongIRFET N channel-Channel Power MOSFET, 119 A, 30 V Enhancement, 3-Pin PG-TO263-3 IPB023N03LF2SATMA1

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Kr. 18,60

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Kr. 23,25

(inc. VAT)

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1 - 9Kr. 18,60
10 - 24Kr. 15,65
25 - 99Kr. 9,63
100 - 499Kr. 9,50
500 +Kr. 9,23

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RS Stock No.:
762-990
Mfr. Part No.:
IPB023N03LF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

30V

Series

StrongIRFET

Package Type

PG-TO263-3

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

2.35mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

107W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

15.88mm

Height

4.83mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 Power Transistor is a 30V N-channel MOSFET suitable for various applications. It operates in extreme conditions, with a maximum temperature rating of 175°C and conforms to environmental regulations.

100% avalanche tested

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

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