Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3 IPB057N06NATMA1

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Subtotal (1 reel of 1000 units)*

Kr.6 029 00 

(exc. VAT)

Kr.7 536 00 

(inc. VAT)

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Units
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Per Reel*
1000 +Kr. 6,029Kr. 6 029,00

*price indicative

RS Stock No.:
273-2997
Mfr. Part No.:
IPB057N06NATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

60V

Series

IPB057N06N

Package Type

PG-TO263-3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

27nC

Minimum Operating Temperature

-5°C

Maximum Operating Temperature

175°C

Height

1.5mm

Width

40 mm

Standards/Approvals

JEDEC 1, IEC61249-2-21

Length

40mm

Automotive Standard

No

The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl

Highest system efficiency

Less paralleling required

Increased power density

System cost reduction

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