Infineon ISA N-Channel MOSFET, 248 A, 100 V Enhancement, 5-Pin sTOLL IST026N10NM5AUMA1
- RS Stock No.:
- 273-2822
- Mfr. Part No.:
- IST026N10NM5AUMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
Kr. 123,44
(exc. VAT)
Kr. 154,30
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 100 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | Kr. 61,72 | Kr. 123,44 |
| 50 - 98 | Kr. 56,055 | Kr. 112,11 |
| 100 - 248 | Kr. 51,425 | Kr. 102,85 |
| 250 - 998 | Kr. 47,475 | Kr. 94,95 |
| 1000 + | Kr. 44,045 | Kr. 88,09 |
*price indicative
- RS Stock No.:
- 273-2822
- Mfr. Part No.:
- IST026N10NM5AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 248A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISA | |
| Package Type | sTOLL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 7.2mm | |
| Width | 6.9mm | |
| Standards/Approvals | RoHS | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 248A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISA | ||
Package Type sTOLL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 7.2mm | ||
Width 6.9mm | ||
Standards/Approvals RoHS | ||
Height 2.4mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel MOSFET and optimized for low voltage motor drives application and for battery powered applications. This MOSFET is qualified according to JEDEC for industrial applications.
RoHS compliant
Pb free lead plating
100 percent avalanche tested
Enables automated optical solder inspection
Related links
- Infineon ISA N-Channel MOSFET 100 V Enhancement, 5-Pin sTOLL IST026N10NM5AUMA1
- Infineon IST N-Channel Power Transistor 60 V Enhancement, 5-Pin sTOLL
- Infineon IST N-Channel Power Transistor 60 V Enhancement, 5-Pin sTOLL IST011N06NM5AUMA1
- DiodesZetex DMTH10H2M5STLWQ N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI1012 DMTH10H2M5STLWQ-13
- DiodesZetex DMTH10H2M5STLW N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI1012 DMTH10H2M5STLW-13
- DiodesZetex DMTH10H2M5STLWQ N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI1012
- DiodesZetex DMTH10H2M5STLW N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI1012
- Infineon ISA Dual N-Channel MOSFET 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1
