Infineon BSL606SN N-Channel MOSFET, 4.5 A, 60 V Enhancement, 6-Pin PG-TSOP-6 BSL606SNH6327XTSA1

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Kr. 89,23

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Kr. 111,54

(inc. VAT)

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10 - 40Kr. 8,923Kr. 89,23
50 - 90Kr. 8,763Kr. 87,63
100 - 240Kr. 6,875Kr. 68,75
250 - 990Kr. 6,704Kr. 67,04
1000 +Kr. 4,53Kr. 45,30

*price indicative

RS Stock No.:
273-2854
Mfr. Part No.:
BSL606SNH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TSOP-6

Series

BSL606SN

Mount Type

Surface

Pin Count

6

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.7nC

Maximum Operating Temperature

150°C

Width

40mm

Length

40mm

Height

1.5mm

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

Infineon BSL606SN Series MOSFET, 60V Maximum Drain-Source Voltage, 4.5A Maximum Continuous Drain Current - BSL606SNH6327XTSA1


This n-channel enhancement MOSFET is designed for surface-mounted power switching in automotive environments. It delivers moderate current handling and voltage capability with a low forward voltage characteristic, suitable for control and load-switching roles across a wide ambient range. The device is packaged for Compact assembly and meets automotive stress-test qualification for use in temperature-extreme applications.

Features and Benefits:


• 60V Maximum Drain-Source Voltage provides robust voltage headroom
• 4.5A Maximum Continuous Drain Current enables moderate current switching
• 1.1V Forward Voltage minimises conduction losses during operation
• 3.7nC Typical Gate Charge enables Faster switching response
• 2W Maximum Power Dissipation allows continuous thermal handling

Applications


• Suitable for automotive power distribution modules
• Ideal for DC load switching in control units
• Used with Compact surface assemblies requiring space savings
• Can be used for motor driver low-side switching tasks

What gate drive limitations should I consider?


The device accepts up to 20V between gate and source, so gate-drive circuits must remain within this limit.

How does the device handle temperature extremes?


It operates across a range from -55°C to 150°C, allowing use in harsh ambient and under‑bonnet conditions.

What mounting method is required for assembly?


It is intended for surface mounting in a PG-TSOP-6 package to suit automated PCB assembly.

What channel and mode does it use for switching?


The transistor uses an n-type channel in enhancement mode for conventional MOSFET switching behaviour.

Are there specific industry approvals for automotive use?


It conforms to AEC‑Q101 qualification for acceptance in automotive electronic applications.

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