Vishay SQ Type N-Channel MOSFET, 7.8 A, 30 V Enhancement, 6-Pin TSOP-6 SQ3456CEV-T1_GE3
- RS Stock No.:
- 268-8353
- Mfr. Part No.:
- SQ3456CEV-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.129 85
(exc. VAT)
Kr.162 30
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 3 025 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 5,194 | Kr. 129,85 |
| 50 - 75 | Kr. 5,088 | Kr. 127,20 |
| 100 - 225 | Kr. 3,867 | Kr. 96,68 |
| 250 - 975 | Kr. 3,794 | Kr. 94,85 |
| 1000 + | Kr. 2,434 | Kr. 60,85 |
*price indicative
- RS Stock No.:
- 268-8353
- Mfr. Part No.:
- SQ3456CEV-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SQ | |
| Package Type | TSOP-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.054Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 4W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.05mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SQ | ||
Package Type TSOP-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.054Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 4W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.05mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device with single configuration MOSFET and surface mount type device. It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
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