Vishay SQ Rugged Type N-Channel MOSFET, 8 A, 20 V Enhancement, 6-Pin TSOP SQ3460EV-T1_GE3
- RS Stock No.:
- 787-9468
- Mfr. Part No.:
- SQ3460EV-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 10 units)*
Kr.90 83
(exc. VAT)
Kr.113 54
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 15. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | Kr. 9,083 | Kr. 90,83 |
| 100 - 240 | Kr. 8,534 | Kr. 85,34 |
| 250 - 490 | Kr. 7,733 | Kr. 77,33 |
| 500 - 990 | Kr. 7,276 | Kr. 72,76 |
| 1000 + | Kr. 6,818 | Kr. 68,18 |
*price indicative
- RS Stock No.:
- 787-9468
- Mfr. Part No.:
- SQ3460EV-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 53mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.77V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 3.6W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.1mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 53mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.77V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 3.6W | ||
Maximum Operating Temperature 175°C | ||
Length 3.1mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
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