Vishay SQ Rugged Type N-Channel MOSFET, 32 A, 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3
- RS Stock No.:
- 787-9496
- Mfr. Part No.:
- SQJ412EP-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.152 04
(exc. VAT)
Kr.190 05
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 15. juni 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 30,408 | Kr. 152,04 |
| 50 - 120 | Kr. 25,832 | Kr. 129,16 |
| 125 - 245 | Kr. 24,322 | Kr. 121,61 |
| 250 - 495 | Kr. 22,788 | Kr. 113,94 |
| 500 + | Kr. 21,302 | Kr. 106,51 |
*price indicative
- RS Stock No.:
- 787-9496
- Mfr. Part No.:
- SQJ412EP-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Height | 1.14mm | |
| Standards/Approvals | No | |
| Width | 5.03 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Height 1.14mm | ||
Standards/Approvals No | ||
Width 5.03 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
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