Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263 IRFS7537TRLPBF

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Subtotal (1 reel of 800 units)*

Kr.6 572 00 

(exc. VAT)

Kr.8 215 20 

(inc. VAT)

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Units
Per unit
Per Reel*
800 +Kr. 8,215Kr. 6 572,00

*price indicative

RS Stock No.:
273-3029
Mfr. Part No.:
IRFS7537TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

173A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.30mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

142nC

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.

Product qualification according to JEDEC standard

Softer body diode compared to previous silicon generation

Industry standard surface-mount power package

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