Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263

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Subtotal (1 pack of 5 units)*

Kr.98 39 

(exc. VAT)

Kr.122 99 

(inc. VAT)

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Per Pack*
5 - 20Kr. 19,678Kr. 98,39
25 - 45Kr. 16,428Kr. 82,14
50 - 95Kr. 15,146Kr. 75,73
100 - 245Kr. 14,048Kr. 70,24
250 +Kr. 13,796Kr. 68,98

*price indicative

RS Stock No.:
273-3030
Mfr. Part No.:
IRFS7537TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

173A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.30mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

230W

Typical Gate Charge Qg @ Vgs

142nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.

Product qualification according to JEDEC standard

Softer body diode compared to previous silicon generation

Industry standard surface-mount power package

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